Samsung Develops 32 GB NAND Flash

Samsung Electronics announced on Monday that they have developed memory device with smallest circuit ever. Samsung says the tiny new 32-gigabit NAND flash chips are the first made with circuit elements 40 nanometers wide. (1 Nanometer is one millionth of a millimeter)

The chip is based on a new technology called Charge Trap Flash or CTF which allows to reduce the size of the electronic elements in the circuit to made even smaller and improve the efficiency of the manufacturing process. The TANOS CTF architecture, which serves as the foundation of the 40nm 32Gb CTF NAND flash announced today, was developed after extensive research of the Samsung Semiconductor R&D department. Samsung first revealed the TANOS structure through a paper at the 2003 International Electron Devices Meeting (IEDM). The new 32Gb CTF memory was announced at the sixth annual Samsung 
press conference in Seoul.

The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours). This would mean memory chips with huge storage capacities in your pockets and also devices with memory cards like Digital Camera, USB drive, Smart phones etc.

Samsung said the new structure will enable the process to be eventually refined to 20 nanometers, further increasing the memory size of portable digital gadgets. No date is set for its release yet, the company said.

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